The latest version of One UI 8 in July BYG1, this is the first time that the kernel version has been upgraded from 6.6.57 to 6.6.77 since S25 Ultra conducted the internal test of ONE UI 8. The fluency has continued to improve and the functions have been gradually improved.
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ColorOS 16 is Coming soon in the very near future.
Real Time Dynamic Lockscreen, Even Smoother effects than what ColorOS 15 has to Offer & also might use Liquid/ most probably frosted Glass style Design.
Real Time Dynamic Lockscreen, Even Smoother effects than what ColorOS 15 has to Offer & also might use Liquid/ most probably frosted Glass style Design.
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Tecno Pova 7 Series delta light interface
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Dimensity 8350 is very close to 7+ Gen 3 ..and...
7+ Gen 3 and 8s Gen 3 are pretty close !!
So, if you compare Nord 5 & Nord CE 5 purely based on performance, then...
Nord CE 5 clearly has better price to performance than Nord 5 !
7+ Gen 3 and 8s Gen 3 are pretty close !!
So, if you compare Nord 5 & Nord CE 5 purely based on performance, then...
Nord CE 5 clearly has better price to performance than Nord 5 !
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The working principle of Samsung One UI 8 adaptive lock screen clock: The clock automatically recognizes the contours of animals and people, and then extends and retracts freely to avoid blocking the subject, with full elasticity between coming and going
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Display & Sound Test : POCO F7 VS POCO F6 VS POCO F5 VS POCO F4 : POCO F7 Wins?
https://youtu.be/8GbeQhm9DRQ
https://youtu.be/8GbeQhm9DRQ
https://youtu.be/8GbeQhm9DRQ
https://youtu.be/8GbeQhm9DRQ
https://youtu.be/8GbeQhm9DRQ
https://youtu.be/8GbeQhm9DRQ
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Nothing Launcher v3.3.4 update out now!
- Redesigned App Drawer (Phone (3) style!)
- Essential Search
- Smoother Animations
Direct APK download available!
#NothingLauncher #Update #Android
- Redesigned App Drawer (Phone (3) style!)
- Essential Search
- Smoother Animations
Direct APK download available!
#NothingLauncher #Update #Android
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New Essential Search Bar now available on Nothing Phones! 🔍
Just update your Nothing Launcher to v3.3.4 to get universal search with quick app actions & widgets.
Just update your Nothing Launcher to v3.3.4 to get universal search with quick app actions & widgets.
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IISc Bengaluru-led ₹500 crore proposal to develop angstrom-scale chips—a bold step into the post-silicon future of semiconductors.
---
🧬 What Are Angstrom-Scale Chips?
Angstrom-scale chips refer to semiconductors built at the scale of angstroms, where
1 angstrom = 0.1 nanometers. For context, today’s most advanced chips operate at the 3nm level. Angstrom-scale devices push us into the sub-nanometer realm, where traditional silicon-based transistors begin to fail due to quantum tunneling and heat dissipation issues.
To overcome these limitations, researchers are exploring 2D materials such as:
- Graphene – a single layer of carbon atoms with exceptional electrical conductivity.
- Transition Metal Dichalcogenides (TMDs) – materials like MoS₂ and WS₂ that offer tunable bandgaps, essential for transistor behavior.
- Hexagonal Boron Nitride (h-BN) – often used as an insulating layer in 2D heterostructures.
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🧪 The ₹500 Crore IISc Proposal: Core Details
The Indian Institute of Science (IISc), Bengaluru, is spearheading a ₹500 crore, 5-year research initiative to develop angstrom-scale semiconductor technology. The proposal is currently under review by the Principal Scientific Adviser (PSA) and the Ministry of Electronics and IT (MeitY).
Key elements of the proposal include:
- A 30-member interdisciplinary team of physicists, materials scientists, and electrical engineers.
- Backing from strategic institutions like NITI Aayog, DRDO, Department of Space, and the Anusandhan National Research Foundation (ANRF).
- A focus on developing indigenous capabilities in 2D material synthesis, device fabrication, and system-level integration.
---
🔧 The Science Behind It
2D materials offer several advantages over silicon:
- High electron mobility (especially in graphene) for faster switching.
- Superior thermal conductivity, reducing overheating.
- Mechanical flexibility, enabling foldable and wearable electronics.
- Tunable bandgaps, essential for designing transistors at atomic scales.
These properties make them ideal candidates for angstrom-scale transistors, where silicon simply cannot function reliably.
---
🧭 What Lies Ahead?
If the proposal is approved:
- IISc will establish a national research hub for angstrom-scale electronics.
- The project will create a pipeline of skilled researchers and technologists.
- India could emerge as a design and IP powerhouse in the post-silicon era.
The team has also proposed a self-sustaining roadmap beyond the initial funding phase, aiming to attract private and international collaboration.
---
🧬 What Are Angstrom-Scale Chips?
Angstrom-scale chips refer to semiconductors built at the scale of angstroms, where
1 angstrom = 0.1 nanometers. For context, today’s most advanced chips operate at the 3nm level. Angstrom-scale devices push us into the sub-nanometer realm, where traditional silicon-based transistors begin to fail due to quantum tunneling and heat dissipation issues.
To overcome these limitations, researchers are exploring 2D materials such as:
- Graphene – a single layer of carbon atoms with exceptional electrical conductivity.
- Transition Metal Dichalcogenides (TMDs) – materials like MoS₂ and WS₂ that offer tunable bandgaps, essential for transistor behavior.
- Hexagonal Boron Nitride (h-BN) – often used as an insulating layer in 2D heterostructures.
---
🧪 The ₹500 Crore IISc Proposal: Core Details
The Indian Institute of Science (IISc), Bengaluru, is spearheading a ₹500 crore, 5-year research initiative to develop angstrom-scale semiconductor technology. The proposal is currently under review by the Principal Scientific Adviser (PSA) and the Ministry of Electronics and IT (MeitY).
Key elements of the proposal include:
- A 30-member interdisciplinary team of physicists, materials scientists, and electrical engineers.
- Backing from strategic institutions like NITI Aayog, DRDO, Department of Space, and the Anusandhan National Research Foundation (ANRF).
- A focus on developing indigenous capabilities in 2D material synthesis, device fabrication, and system-level integration.
---
🔧 The Science Behind It
2D materials offer several advantages over silicon:
- High electron mobility (especially in graphene) for faster switching.
- Superior thermal conductivity, reducing overheating.
- Mechanical flexibility, enabling foldable and wearable electronics.
- Tunable bandgaps, essential for designing transistors at atomic scales.
These properties make them ideal candidates for angstrom-scale transistors, where silicon simply cannot function reliably.
---
🧭 What Lies Ahead?
If the proposal is approved:
- IISc will establish a national research hub for angstrom-scale electronics.
- The project will create a pipeline of skilled researchers and technologists.
- India could emerge as a design and IP powerhouse in the post-silicon era.
The team has also proposed a self-sustaining roadmap beyond the initial funding phase, aiming to attract private and international collaboration.
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